Forschungsnews 2020

FBH research: 17.02.2020

Improved thermal management of InP high-power transistors

InP HBT technology is an ideal candidate for microwave applications in the terahertz range. The FBH uses a transfer substrate process to successfully suppress significant parasitic effects. For further improvements, an in-house diamond wafer bonding process was developed to enhance the thermal management of the wafer.