To make older systems ready for digitization, FBH has been developing iSensU to provide ad-hoc connectivity to legacy devices, black-box sensors, and industrial light towers. iSensU will shortly be made available to FBH's partner institutes within Research Fab Microelectronics Germany.
InP HBT technology is an ideal candidate for microwave applications in the terahertz range. The FBH uses a transfer substrate process to successfully suppress significant parasitic effects. For further improvements, an in-house diamond wafer bonding process was developed to enhance the thermal management of the wafer.
The next-generation wireless communication infrastructure demands for high flexibility, low cost and high efficiency. The FBH has developed a digital outphasing power amplifier module, an important step towards the all-digital transmitter chain.
FBH demonstrates new performance records of diode laser bars at the operation point of 1 kW. One design approach increased the conversion efficiency up to 66%, while an alternative approach reduced the lateral divergence down to 8.8°, both best-in-class results.
The FBH presents a new, compact and monolithically integrated tunable dual-wavelength laser design based on gallium arsenide. The device parameters were optimized by means of sophisticated simulation tools.