Quelle: Embedded Computing Design, 30.08.2019 (in Englisch)

Ferdinand-Braun-Institut Researchers Create Gallium Oxide Power Transistors with Record Values

 The Ferdinand-Braun-Institut (FBH) recently announced a breakthrough with transistors based on gallium oxide (ß-Ga2O3). The ß-Ga2O3-MOSFETs provide a high breakdown voltage as well as high current conductivity, while offering a breakdown voltage of 1.8 kilovolts and a power figure of merit of 155 megawatts per square centimeter.
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