Lateral 1.8 kV β-Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit

K. Tetzner1, E. Bahat Treidel1, O. Hilt1, A. Popp2, S. Bin Anooz2, G. Wagner2, A. Thies1, K. Ickert1, H. Gargouri3, and J. Würfl1

Published in:

IEEE Electron Device Lett., vol. 40, no. 9, pp. 1503-1506 (2019).

Copyright © 2019 IEEE - All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Abstract:

Lateral β-Ga2O3 MOSFET for power switching applications with a 1.8 kV breakdown voltage and a record power figure of merit of 155 MW/cm2 are demonstrated. Sub-µm gate length combined with gate recess was used to achieve low ON-state resistances with reasonable threshold voltages above -24 V. The combination of compensation-doped high-quality crystals, implantation-based inter-device isolation, and SiNx-passivation yielded in consistently high average breakdown field strengths of 1.8-2.2 MV/cm for gate-drain spacings between 2 and 10 µm. These values outperform the results of more established wide-bandgap device technologies, such as SiC or GaN, and the major Ga2O3 material promise — a higher breakdown strength — is well demonstrated.

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
2 Leibniz-Institut für Kristallzüchtung (IKZ), 12489 Berlin, Germany
3 SENTECH Instruments GmbH, 12489 Berlin, Germany

Index Terms:

Ga2O3, MOSFET, power electronics, break-down, high voltage.