Monolithic master oscillator with tapered power amplifier diode laser at 1060 nm with additional control section for high power operation

C. Zink, M. Maiwald, H. Wenzel, B. Sumpf and G. Tränkle

Published in:

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2019), Munich, Germany, Jun. 23-27, ISBN: 978-1-7281-0469-0, cb-3.1 (2019).

Copyright © 2019 IEEE - All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.


State of the art diode laser light sources for high power operation with good beam quality are distributed Bragg reflector tapered diode lasers (DBR-TPLs). These devices deliver over 10 W of spectrally narrowband emission within an almost diffraction-limited beam [1]. However, due to the integration of the tapered section into the resonator, these devices are designed that only a forward traveling wave is optimal confined and amplified. This trade-off limits the potential of these devices. One way to overcome this limitation is to move the tapered section outside of the resonator and use as a single pass power amplifier in a monolithic master oscillator power amplifier (MOPA) layout [2]–[4]. However, the benefits on the emissions characteristics, as discussed below, of these devices can diminish if multi-cavity operation occurs.

Ferdinand-Braun-Institut, Leibniz Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany